XP60T10GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP60T10GS Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Charact.
XP60T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP60T10GS
Manufacturer: YAGEO
File Size: 289.91 KB
Datasheet: XP60T10GS-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID 100V 18mΩ 67A GDS TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless oth

XP60T10GS Distributors

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XP60T10GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP60T10GS-like datasheet