XP65AN1K2J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65AN1K2J Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP65AN1K2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP65AN1K2J
Manufacturer: YAGEO
File Size: 135.99 KB
Datasheet: XP65AN1K2J-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. BVDSS RDS(ON) ID3 650V 1.2Ω 7A G DS TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V

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XP65AN1K2J N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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