XP65AN1K2S N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65AN1K2S Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characterist.
XP65AN1K2 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP65AN1K2S
Manufacturer: YAGEO
File Size: 254.23 KB
Datasheet: XP65AN1K2S-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID3 650V 1.2Ω 7A G D S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless o

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XP65AN1K2S N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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