XP65SA190DP Datasheet - YAGEO

XP65SA190DP, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP65SA190DP Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP65SA190D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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XP65SA190DP-YAGEO.pdf

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Datasheet Details

Part number:

XP65SA190DP

Manufacturer:

YAGEO

File Size:

189.44 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID3,4 G D S 650V 0.19Ω 20A TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise specif

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XP65SA190DP N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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