XP65SA190DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65SA190DR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP65SA190D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP65SA190DR
Manufacturer: YAGEO
File Size: 190.04 KB
Datasheet: XP65SA190DR-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 G D S 650V 0.19Ω 20A TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

XP65SA190DR Distributors

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XP65SA190DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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