XP65SA190DR Datasheet - YAGEO

XP65SA190DR, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP65SA190DR Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Low trr / Qrr ▼ Simple Drive Requirement G ▼ RoH.
XP65SA190D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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XP65SA190DR-YAGEO.pdf

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Datasheet Details

Part number:

XP65SA190DR

Manufacturer:

YAGEO

File Size:

190.04 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID3,4 G D S 650V 0.19Ω 20A TO-262(R) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating

XP65SA190DR Distributors

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XP65SA190DR N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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