XP65SL190DP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP65SL190DP Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Fast Switching Characteristic ▼ Simple Drive Req.
XP65SL190D series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP65SL190DP
Manufacturer: YAGEO
File Size: 190.11 KB
Datasheet: XP65SL190DP-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID3,4 G D S 650V 0.19Ω 20A TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise specif

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XP65SL190DP N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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