XP6A038M DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6A038M Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Surface Mount.
XP6A038 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6A038M
Manufacturer: YAGEO
File Size: 209.34 KB
Datasheet: XP6A038M-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G1 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 D1 G2 S1 60V 38mΩ 5A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) S

XP6A038M Distributors

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XP6A038M DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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