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XP6B1K0EU6 Datasheet - YAGEO

XP6B1K0EU6 DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

D1 D2 XP6B1K0 series are innovated design and silicon process technology G1 G2 to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. S1 S2 SOT-363 package is ult.

XP6B1K0EU6-YAGEO.pdf

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Datasheet Details

Part number:

XP6B1K0EU6

Manufacturer:

YAGEO

File Size:

128.58 KB

Description:

Dual p-channel enhancement mode power mosfet.

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XP6B1K0EU6 XP6B1K0EU6 DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO