XP6B1K0EU6 DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6B1K0EU6 Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Gate Drive ▼ Small Package Outline ▼ Embedded Protection Diode .
D1 D2 XP6B1K0 series are innovated design and silicon process technology G1 G2 to achieve the lowest possible on-resistance and fast switching.

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Datasheet Specifications

Part number: XP6B1K0EU6
Manufacturer: YAGEO
File Size: 128.58 KB
Datasheet: XP6B1K0EU6-YAGEO.pdf
Description: DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* S1 S2 SOT-363 package is ultra-small surface mount package and lead free RoHS compliant. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Cu

XP6B1K0EU6 Distributors

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XP6B1K0EU6 DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP6B1K0EU6-like datasheet