XP6P025H Datasheet - YAGEO

XP6P025H - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

XP6P025 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

BVDSS RDS(ON) ID -60V 25mΩ -40A G D S TO-252(H)

Datasheet Details

XP6P025H

YAGEO

180.78 KB

P-channel enhancement mode power mosfet.

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