XP6P025H P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6P025H Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic.
XP6P025 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6P025H
Manufacturer: YAGEO
File Size: 180.78 KB
Datasheet: XP6P025H-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID -60V 25mΩ -40A G D S TO-252(H) The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. Absolute Maximum Ratings@Tj=25oC(unless

XP6P025H Distributors

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XP6P025H P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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