XP6P050S P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6P050S Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Fast Switching Characteristic.
XP6P050 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6P050S
Manufacturer: YAGEO
File Size: 261.21 KB
Datasheet: XP6P050S-YAGEO.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. BVDSS RDS(ON) ID -60V 50mΩ -19A G D S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless o

XP6P050S Distributors

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XP6P050S P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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