XP9976GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP9976GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP9976 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and G1 fast switching performance.

📥 Download Datasheet

XP9976GM Datasheet Preview — Preview of XP9976GM PDF

Datasheet Specifications

Part number: XP9976GM
Manufacturer: YAGEO
File Size: 242.26 KB
Datasheet: XP9976GM-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID D1 G2 S1 60V 20.5mΩ 7.6A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Sy

XP9976GM Distributors

📁 Related Datasheet

📌 All Tags

XP9976GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP9976GM-like datasheet