CPD87R Datasheet - centralsemi

CPD87R Low Leakage Schottky Diode

PROCESS CPD87R Schottky Diode Low Leakage Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 14.6 x 14.6 MILS 3.9 MILS 11.8 x 11.8 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 80,698 PRINCIPAL DEVICE TYPES CFSH2-4L R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD87R Typical Electrical Characteristics R1 (22-March 2010) .

CPD87R-centralsemi.pdf