PROCESS 3.3 Volt TVS Chip CPZ35R Transient Voltage Suppressor PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 10.2 x 10.2 MILS 3.9 MILS 7.1 MILS DIAMETER Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 163,034 PRINCIPAL DEVICE TYPE CMATVS3V3 R0 (5-January 2012) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPZ35R Typical Electrical Characteristics R0 (5-January 2012) w w w. c e n t r a .
