CSD13302W Datasheet - Texas Instruments

CSD13302W 12-V N-Channel Power MOSFET

This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1 mm outline with excellent thermal characteristics and an ultra low profile. Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Ga.

CSD13302W Features

* 1 Ultra Low On Resistance

* Low Qg and Qgd

* Small Footprint 1 mm × 1 mm

* Low Profile 0.62 mm Height

* Pb Free

* RoHS Compliant

* Halogen Free 2 Applications

* Battery Management

* Load Switch

* Battery Protection 3 De

CSD13302W-etcTI.pdf