CSD13383F4

12-V N-Channel Power MOSFET

Texas Instruments

CSD13383F4 Features

* Low on-resistance

* Ultra low Qg and Qgd

* Ultra-small footprint (0402 case size)

* 1.0 mm × 0.6 mm

* Low profile

* 0.36 mm height

* Integrated ESD protection diode

* Rated >2 kV HBM

* Rated >2 kV CDM

* Lead and haloge

CSD13383F4 General Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . 0.36 mm Product .

CSD13383F4 Datasheet (1.44 MB)