CSD13306W Datasheet - Texas Instruments

CSD13306W 12-V N-Channel Power MOSFET

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile. Top View GSS DDD Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V).

CSD13306W Features

* 1 Ultra Low on Resistance

* Low Qg and Qgd

* Small Footprint 1 × 1.5 mm

* Low Profile 0.62 mm Height

* Pb Free

* RoHS Compliant

* Halogen Free 2 Applications

* Battery Management

* Load Switch

* Battery Protection 3 Des

CSD13306W-etcTI.pdf