CSD13306W - 12-V N-Channel Power MOSFET
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
Top View GSS DDD Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V)
CSD13306W Features
* 1 Ultra Low on Resistance
* Low Qg and Qgd
* Small Footprint 1 × 1.5 mm
* Low Profile 0.62 mm Height
* Pb Free
* RoHS Compliant
* Halogen Free 2 Applications
* Battery Management
* Load Switch
* Battery Protection 3 Des
