CSD13303W1015 Datasheet - Texas Instruments

CSD13303W1015 N-Channel Power MOSFET

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) .

CSD13303W1015 Features

* 1

* Ultra Low on Resistance

* Ultra Low Qg and Qgd

* Small Footprint

* Low Profile 0.62 mm Height

* Pb Free

* RoHS Compliant

* Halogen Free

* CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS

* Battery Management

* Load Sw