TMS416160 Datasheet - Texas Instruments

TMS416160 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS

The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply‡ Ground Write Enable bits each. The TMS4xx160P series is a similar ‡ See Available Options T.

TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C MAY 1995 REVISED NOVEMBER 1995 D Organization . . . 1 048576 × 16 D Single Power Supply (5 V or 3.3 V) D Performance Ranges: ACCESS ACCESS ACCESS TIME TIME TIME READ OR WRITE DGE PACKAGE ( TOP VIEW ) VCC 1 DQ0 2 50 VSS 49 DQ15 DZ PACKAGE ( TOP VIEW ) VCC 1 DQ0 2 42 VSS 41 DQ15 tRAC MAX tCAC MAX tAA MAX CYCLE MIN ’4xx160/P-60 6.

TMS416160-etcTI.pdf