TMS416169 Datasheet - Texas Instruments

TMS416169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

† A10 and A11 are NC for TMS418169. The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost..

TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS D Organization . . . 1 048576 Words by 16 Bits D Single 5-V Power Supply D Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC MAX tCAC MAX tAA MAX CYCLE MIN ’41x169/P-60 60 ns 15 ns 30 ns 25 ns ’41x169/P-70 70 ns 18 ns 35 ns 30 ns ’41x169/P-80 80 ns 20 ns 40 ns 35 ns D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D RAS-Only Refresh 1 024-Cycle Refresh .

TMS416169-etcTI.pdf