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TPS1120Y

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

TPS1120Y General Description

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of

* 1.5 V and an IDSS of only 0.5 µA, the TPS1120 .

TPS1120Y Datasheet (373.89 KB)

Preview of TPS1120Y PDF

Datasheet Details

Part number:

TPS1120Y

Manufacturer:

Texas Instruments ↗

File Size:

373.89 KB

Description:

Dual p-channel enhancement-mode mosfets.
TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS =

* 10 V D 3-V Compatible D Requires No External .

📁 Related Datasheet

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°¥ All the data listed in this catalogue are for reference only,TAI-TECH reserves the right to alter or revise the specifications without prior notif.

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TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Texas Instruments

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