MSG25T120FQC
maspower
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MSG20T120FQC - N-Channel IGBT
(maspower)
Features
Low Gate charge FS Technology VCE(sat) = 1.7V @ IC = 20A High Input Impedance Short circuit withstand time 10 µs
MSG20T120FQC
N-Ch.
MSG20T65FQC - MOSFET
(maspower)
Features
Low gate charge Trench FS Technology, saturation voltage: VCE(sat),
typ =1.6V,IC=20A and TC =25°C RoHS product
MSG20T65FQS/T/C
Appl.
MSG20T65FQS - MOSFET
(maspower)
Features
Low gate charge Trench FS Technology, saturation voltage: VCE(sat),
typ =1.6V,IC=20A and TC =25°C RoHS product
MSG20T65FQS/T/C
Appl.
MSG20T65FQT - MOSFET
(maspower)
Features
Low gate charge Trench FS Technology, saturation voltage: VCE(sat),
typ =1.6V,IC=20A and TC =25°C RoHS product
MSG20T65FQS/T/C
Appl.
MSG061P03G - P-Channel Enhancement Mode MOSFET
(CITC)
MSG061P03G
P-Channel Enhancement Mode MOSFET
■ Features
• -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
• HBM ESD p.
MSG100G41 - MSG100x41
(ETC)
http://store.iiic.cc/
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MSG100J41 - MSG100x41
(ETC)
http://store.iiic.cc/
.
MSG100L41 - MSG100x41
(ETC)
http://store.iiic.cc/
.
MSG100N41 - MSG100x41
(ETC)
http://store.iiic.cc/
.
MSG100Q41 - MSG100x41
(ETC)
http://store.iiic.cc/
.