• Part: BAV170-Q
  • Description: Low-leakage double diode
  • Category: Diode
  • Manufacturer: Nexperia
  • Size: 202.60 KB
Download BAV170-Q Datasheet PDF
Nexperia
BAV170-Q
description Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in mon cathode configuration. 2. Features and benefits - Plastic SMD package - Low leakage current: typ. 3 p A - Switching time: typ. 0.8 us - Continuous reverse voltage: max. 75 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 m A. - Qualified according to AEC-Q101 and remended for use in automotive applications 3. Applications - Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current Conditions Tj = 25 °C VR = 75 V; pulsed; Tj = 25 °C Min Typ Max Unit - - - 0.003 5 n A Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description A1 anode (diode 1) A2 anode (diode 2) CC mon cathode Simplified outline Low-leakage double diode Graphic...