BAV170-Q Datasheet - nexperia

BAV170-Q, Low-leakage double diode

BAV170-Q Low-leakage double diode 4 August 2021 Product data sheet 1.General .
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.

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BAV170-Q-nexperia.pdf

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Datasheet Details

Part number:

BAV170-Q

Manufacturer:

nexperia ↗

File Size:

202.60 KB

Description:

Low-leakage double diode

Features

* Plastic SMD package
* Low leakage current: typ. 3 pA
* Switching time: typ. 0.8 us
* Continuous reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 85 V
* Repetitive peak forward current: max. 500 mA.
* Qualified according to A

Applications

* 3. Applications
* Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current Conditions Tj = 25 °C VR = 75 V; pulsed; Tj = 25 °C Min Typ Max Unit - - 75 V

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BAV170-Q Low-leakage double diode nexperia

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