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BAV170M - Dual common cathode low-leakage diode

Datasheet Summary

Description

Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High switching speed: trr = 0.8 µs.
  • Low leakage current: IR = 3 pA.
  • Repetitive peak reverse voltage VRRM ≤ 85 V.
  • Low capacitance Cd = 2 pF.
  • Ultra small SMD plastic package.
  • Low package height of 0.48 mm.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number BAV170M
Manufacturer nexperia
File Size 672.42 KB
Description Dual common cathode low-leakage diode
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BAV170M Dual common cathode low-leakage diode 19 May 2016 Product data sheet 1. General description Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr = 0.8 µs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance Cd = 2 pF • Ultra small SMD plastic package • Low package height of 0.48 mm • AEC-Q101 qualified 3. Applications • Low-leakage current applications • General-purpose switching 4. Quick reference data Table 1.
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