BAV170M Description
Dual mon cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.
BAV170M Key Features
- High switching speed: trr = 0.8 µs
- Low leakage current: IR = 3 pA
- Repetitive peak reverse voltage VRRM ≤ 85 V
- Low capacitance Cd = 2 pF
- Ultra small SMD plastic package
- Low package height of 0.48 mm
- AEC-Q101 qualified