BAV70S-Q Datasheet - nexperia

BAV70S-Q High-speed switching double diode

BAV70S-Q Features

* High switching speed: trr ≤ 4 ns

* Low capacitance: Cd ≤ 1.5 pF

* Low leakage current

* Reverse voltage: VR ≤ 100 V

* Very small SMD plastic package

* Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications

Datasheet Details

BAV70S-Q

208.85 KB

High-speed switching double diode.

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