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BUK6D385-100E N-channel MOSFET

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Description

BUK6D385-100E 100 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Tr.

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Features

* Extended temperature range Tj = 175 °C
* Side wettable flanks for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipation Static ch

BUK6D385-100E Distributors

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