Datasheet4U Logo Datasheet4U.com

BUK6D43-60E N-channel Trench MOSFET

BUK6D43-60E Description

BUK6D43-60E 60 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Tr.

BUK6D43-60E Features

* Extended temperature range Tj = 175 °C
* Side wettable flanks for optical solder inspection
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Trench MOSFET technology

BUK6D43-60E Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tsp

📥 Download Datasheet

Preview of BUK6D43-60E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK6207-30C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
  • BUK6207-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6208-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6209-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6210-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6211-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6212-40C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK6213-30A - N-Channel MOSFET (NXP Semiconductors)

📌 All Tags

N-channel Trench MOSFET nexperia
nexperia BUK6D43-60E-like datasheet