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BUK6D43-60E N-channel Trench MOSFET

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Description

BUK6D43-60E 60 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Tr.

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Features

* Extended temperature range Tj = 175 °C
* Side wettable flanks for optical solder inspection
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tsp

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