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BUK9V13-40H - Dual N-channel MOSFET

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BUK9V13-40H Product details

Description

Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology.This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM G2 applications.D1 S1, D2 S2 aaa-028081 2.

Features

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