BUK9V13-40H Datasheet - nexperia

BUK9V13-40H Dual N-channel MOSFET

Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-sid.

BUK9V13-40H Features

* LFPAK56D package with half-bridge configuration enables:

* Reduced PCB layout complexity

* PCB shrinkage through reduced component footprint for 3-phase motor drive

* Improved system level Rth(j-amb) due to optimized package design

* Lower parasitic inductan

BUK9V13-40H Datasheet (306.23 KB)