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NX2301P P-channel MOSFET

NX2301P Description

NX2301P 20 V, 2 A P-channel Trench MOSFET Rev.1 * 26 October 2010 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

NX2301P Features

* 1.8 V RDSon rated for Low Voltage Gate Drive
* Very fast switching
* Trench MOSFET technology

NX2301P Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain

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