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NX2020P1 - single P-channel Trench MOSFET

NX2020P1 Description

DFN2020MD-6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

NX2020P1 Features

* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction

NX2020P1 Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portable devices
* Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate

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Datasheet Details

Part number
NX2020P1
Manufacturer
NXP ↗
File Size
263.74 KB
Datasheet
NX2020P1-NXP.pdf
Description
single P-channel Trench MOSFET

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single P-channel Trench MOSFET NXP
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