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NX2020N2 - N-channel Trench MOSFET

NX2020N2 Description

DFN2020MD-6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

NX2020N2 Features

* Trench MOSFET technology
* Very fast switching
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction

NX2020N2 Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portables
* Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source

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Datasheet Details

Part number
NX2020N2
Manufacturer
NXP ↗
File Size
272.09 KB
Datasheet
NX2020N2-NXP.pdf
Description
N-channel Trench MOSFET

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N-channel Trench MOSFET NXP
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