PBSS304NX-Q 4.7A NPN low VCEsat transistor

nexperia

Description

PBSS304NX-Q 60 V, 4.7 A NPN low VCEsat transistor 9 November 2023 Product data sheet 1.General .
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS304NX-Q
Manufacturer: nexperia ↗
File Size: 300.24 KB
Datasheet: PBSS304NX-Q-nexperia.pdf
Description: 4.7A NPN low VCEsat transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* 3. Applications
* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High-voltage power switches (e. g. motors, fans)
* Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Par

PBSS304NX-Q Distributors

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PBSS304NX-Q 4.7A NPN low VCEsat transistor nexperia

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