PBSS304NX - NPN low VCEsat Breakthrough In Small Signal (BISS) transistor

NXP Semiconductors

PBSS304NX Datasheet Preview — Preview of PBSS304NX PDF

Datasheet Details

Part number	PBSS304NX
Manufacturer	NXP ↗ Semiconductors
File Size	252.51 KB
Description	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Datasheet	PBSS304NX_NXPSemiconductors.pdf

PBSS304NX Product details

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

Features

Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📁 PBSS304NX Similar Datasheet

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Published: Jan 11, 2010 |