PBSS304NX NPN low VCEsat Breakthrough In Small Signal (BISS) transistor

NXP Semiconductors

Description

PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev.02 * 20 November 2009 Product data sheet 1.Product profile 1.1 General descripti.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic packa.

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Datasheet Specifications

Part number: PBSS304NX
Manufacturer: NXP ↗ Semiconductors
File Size: 252.51 KB
Datasheet: PBSS304NX_NXPSemiconductors.pdf
Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e. g. motors, fans) Automotive applications 1.4 Quick reference data www. DataSheet4U. com Table 1. Symbol VCEO IC ICM RCEsat [1]

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PBSS304NX NPN low VCEsat Breakthrough Small Signal BISS transistor NXP Semiconductors

NXP Semiconductors PBSS304NX-like datasheet