PBSS302NZ 5.8A NPN transistor

NXP

Description

PBSS302NZ 20 V, 5.8 A NPN low VCEsat transistor 12 January 2023 Product data sheet 1.General .
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS302NZ
Manufacturer: NXP ↗
File Size: 267.03 KB
Datasheet: PBSS302NZ_PhilipsSemiconductors.pdf
Description: 5.8A NPN transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* DC-to-DC conversion
* MOSFET gate driving
* Motor control
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak c

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PBSS302NZ 5.8A NPN transistor NXP

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