* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS302PZ Datasheet (148.96 KB)
PBSS302PZ
148.96 KB
Pnp transistor.
PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General descrip.
📁 Related Datasheet
PBSS302PD PNP Transistor (NXP)
PBSS302PX PNP Transistor (nexperia)
PBSS302ND 40V NPN transistor (NXP)
PBSS302NX 5.3A NPN transistor (nexperia)
PBSS302NZ 5.8A NPN transistor (NXP)
PBSS301ND 4A NPN transistor (NXP)
PBSS301NX 5.3A NPN transistor (nexperia)
PBSS301NZ 5.8A NPN transistor (nexperia)
PBSS301PD PNP Transistor (NXP)
PBSS301PX PNP Transistor (nexperia)
