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PBSS303NX 5.1A NPN transistor

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Description

www.DataSheet4U.com PBSS303NX 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev.01 * 23 August 2006 Product data sheet 1.Product profile 1.1.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic packag.

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Applications

* I I I I I DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 200 mA [1] Symbol Parameter collector-emit

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