Datasheet Details
- Part number
- PBSS303PZ
- Manufacturer
- nexperia ↗
- File Size
- 148.94 KB
- Datasheet
- PBSS303PZ-nexperia.pdf
- Description
- PNP Transistor
PBSS303PZ Description
PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev.02 * 20 November 2009 Product data sheet 1.Product profile 1.1 General descrip.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PBSS303PZ Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS303PZ Applications
* DC-to-DC conversion
* MOSFET gate driving
* Motor control
* Charging circuits
* Power switches (e. g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collecto
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