* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS303PZ Datasheet (148.94 KB)
PBSS303PZ
148.94 KB
Pnp transistor.
PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General descrip.
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