PBSS301PZ PNP Transistor

nexperia

Description

PBSS301PZ 12 V, 5.7 A PNP low VCEsat (BISS) transistor Rev.02 * 17 November 2009 Product data sheet 1.Product profile 1.1 General descrip.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS301PZ
Manufacturer: nexperia ↗
File Size: 148.66 KB
Datasheet: PBSS301PZ-nexperia.pdf
Description: PNP Transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* DC-to-DC conversion
* MOSFET gate driving
* Motor control
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collecto

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PBSS301PZ PNP Transistor nexperia

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