* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio
PBSS302NX Datasheet (173.79 KB)
PBSS302NX
173.79 KB
5.3a npn transistor.
PBSS302NX 20 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General descrip.
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