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PMPB10XNEA - N-channel MOSFET

PMPB10XNEA Description

PMPB10XNEA 20 V, N-channel Trench MOSFET 27 March 2018 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

PMPB10XNEA Features

* Low threshold voltage
* Trench MOSFET technology
* Side wettable flanks for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)

PMPB10XNEA Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

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