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PMV213SN N-channel FET

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Description

PMV213SN N-channel TrenchMOS standard level FET 23 November 2020 Product data sheet 1.General .
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Low on-state r.

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Applications

* DC-to-DC primary side switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current RDSon drain-source on-state resistance Ptot total power dissipation Conditions 25 °C < Tj < 150 °C Tj = 25

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