PMV27UPE P-channel MOSFET

nexperia

Description

PMV27UPE 20 V, P-channel Trench MOSFET 15 May 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: PMV27UPE
Manufacturer: nexperia ↗
File Size: 854.80 KB
Datasheet: PMV27UPE-nexperia.pdf
Description: P-channel MOSFET

Features

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* Enhanced power dissipation capability: Ptot = 980 mW

Applications

* LED driver
* Power management
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID

PMV27UPE Distributors

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PMV27UPE P-channel MOSFET nexperia

nexperia PMV27UPE-like datasheet