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PMV27UPE P-channel MOSFET

PMV27UPE Description

PMV27UPE 20 V, P-channel Trench MOSFET 15 May 2014 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV27UPE Features

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* Enhanced power dissipation capability: Ptot = 980 mW

PMV27UPE Applications

* LED driver
* Power management
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID

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