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PMV27UPEA 20V P-Channel MOSFET

PMV27UPEA Description

PMV27UPEA 20 V, P-channel Trench MOSFET 27 January 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

PMV27UPEA Features

* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* Enhanced power dissipation capability: Ptot = 980 mW
* ElectroStatic Discharge (ESD) protection 2 kV HBM

PMV27UPEA Applications

* LED driver
* Power management
* High-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max VDS drain-source voltage Tj = 25 °C - - -20 VGS gate-source voltage -8 - 8 ID dr

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