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PMV28ENE N-channel MOSFET

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Description

PMV28ENE 30 V, N-channel Trench MOSFET 29 November 2021 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Features

* Logic-level compatible
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain

PMV28ENE Distributors

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PMV28ENE N-channel MOSFET nexperia
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PMV28ENEA
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PMV28UNEA
PMV28XPEA
PMV20EN