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PMV28XPEA P-channel MOSFET

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Description

PMV28XPEA 20 V, P-channel Trench MOSFET 7 July 2020 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Features

* Low threshold voltage
* Extended temperature range Tj = 175 °C
* Very fast switching
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)

Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drai

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