PMV33UPE Datasheet - nexperia

PMV33UPE, P-channel MOSFET

PMV33UPE 20 V, single P-channel Trench MOSFET Rev.1 * 12 June 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state res

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