PSMN1R1-50SLH - 50V N-channel MOSFET

nexperia

Datasheet Details

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology.

280 Amp continuous current capability.
LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating.
Ideal replacement for D2PAK and 10 x 12 mm leadless package types.
Qualified to 175 °C.
Avalanche rated, 100 % tested.
Low QG, QGD and QOSS for high efficie.

📁 PSMN1R1-50SLH Similar Datasheet

Other Datasheets by nexperia

Published: May 1, 2025 |