FDMS4D4N08C

N-Channel MOSFET

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* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A

* Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A

* 50% Lower Qrr than Other MOSFET Suppliers

* Lowers Switching Noise/EMI

* MSL1 Robust Package Design

* 100% UIL Tested

* RoHS Compliant T

FDMS4D4N08C

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N-channel mosfet.

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FDMS4D4N08C N-Channel MOSFET onsemi

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