FDMS4D4N08C - N-Channel MOSFET

onsemi

FDMS4D4N08C Datasheet Preview — Preview of FDMS4D4N08C PDF

Datasheet Details

Part number	FDMS4D4N08C
Manufacturer	onsemi
File Size	481.71 KB
Description	N-Channel MOSFET
Datasheet	FDMS4D4N08C-onsemi.pdf

FDMS4D4N08C Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimise on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A.
Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
RoHS Compliant Typical.

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Published: Apr 14, 2025 |