FDMS4D4N08C N-Channel MOSFET

onsemi

Description

MOSFET * POWERTRENCH), N-Channel Shielded Gate 80 V, 123 A, 4.3 mW FDMS4D4N08C .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS4D4N08C
Manufacturer: onsemi
File Size: 481.71 KB
Datasheet: FDMS4D4N08C-onsemi.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A
* Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Tested
* RoHS Compliant T

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar DATA SHEET www. onsemi. com ELECTRICAL CONNECTION D5 D6 D7 D8 4G 3S 2S 1S N-Channel MOSFET DDDD GSS S Pin 1 Top Bottom Power 56 (PQFN8 5x6) CASE 483AE MARKING DIA

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FDMS4D4N08C N-Channel MOSFET onsemi

onsemi FDMS4D4N08C-like datasheet