FDMS4435BZ Datasheet, Mosfet, Fairchild Semiconductor

✔ FDMS4435BZ Features

Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
Extended VGSS range (-25 V) for battery applications
High perform

✔ FDMS4435BZ Application

High performance trench technology for extremely low rDS(on)
High power and current handling capability

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FDMS4435BZ

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Fairchild Semiconductor

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📄 Datasheet

Description:

Mosfet. This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to

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Stock and price

onsemi

MOSFET P-CH 30V 9A/18A 8PQFN

DigiKey

FDMS4435BZ

17626 In Stock

Qty : 1000 units

Unit Price : $0.59

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FDMS4435BZ MOSFET Fairchild Semiconductor