FDMS4435BZ - MOSFET

Fairchild Semiconductor

FDMS4435BZ Datasheet Preview — Preview of FDMS4435BZ PDF

Datasheet Details

Part number	FDMS4435BZ
Manufacturer	Fairchild ↗ Semiconductor
File Size	397.42 KB
Description	MOSFET
Datasheet	FDMS4435BZ-FairchildSemiconductor.pdf

FDMS4435BZ Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. High side in DC-DC Buck Converters Notebook battery power management Load switch in Notebook Top Bottom Pin 1 S S S G D5 D6 4G 3

Features

Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A.
Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A.
Extended VGSS range (-25 V) for battery.

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Published: Jan 10, 2017 |