FDMS4435BZ Datasheet - Fairchild Semiconductor

MOSFET

FDMS4435BZ Features

* Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A

* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A

* Extended VGSS range (-25 V) for battery applications

* High performance trench technology for extremely low rDS(on)

* High power and current handling capabil

FDMS4435BZ General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pa.

FDMS4435BZ Datasheet (397.42 KB)

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Part number:

FDMS4435BZ

Manufacturer:

Fairchild Semiconductor

File Size:

397.42 KB

Description:

Mosfet.

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FDMS4435BZ MOSFET Fairchild Semiconductor

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FDMS4435BZ Features

FDMS4435BZ General Description

Datasheet Details

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