FDMS4435BZ Datasheet - Fairchild Semiconductor

FDMS4435BZ MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pa.

FDMS4435BZ Features

* Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A

* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A

* Extended VGSS range (-25 V) for battery applications

* High performance trench technology for extremely low rDS(on)

* High power and current handling capabil

FDMS4435BZ-FairchildSemiconductor.pdf