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FDMS4435BZ MOSFET

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Description

FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Features

* Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A

Applications

* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* HBM ESD protection level >7 kV typical (Note 4)
* 100% UIL tested

FDMS4435BZ Distributors

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