FDMS4D5N08LC

N-Channel MOSFET

ON Semiconductor

FDMS4D5N08LC Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 37 A

* Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 29 A

* 50% Lower Qrr than Other MOSFET Suppliers

* Lowers Switching Noise/EMI

* MSL1 Robust Package Design

* 100% UIL

FDMS4D5N08LC General Description

This N

*Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on

*state resistance and yet maintain superior switching performance with best in class soft body diode. .

FDMS4D5N08LC Datasheet (467.78 KB)