FDMS4D5N08LC N-Channel MOSFET

ON Semiconductor

Description

FDMS4D5N08LC MOSFET, N-Channel Shielded Gate, POWERTRENCH) 80 V, 116 A, 4.2 mW General .
This N. Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS4D5N08LC
Manufacturer: ON Semiconductor ↗
File Size: 467.78 KB
Datasheet: FDMS4D5N08LC-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 37 A
* Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 29 A
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage

FDMS4D5N08LC Distributors

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FDMS4D5N08LC N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMS4D5N08LC-like datasheet