FQD30N06 N-Channel MOSFET

onsemi

Description

MOSFET * N-Channel QFET 1000 V, 8 A, 1.45 W FQD30N06 .
This N. Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

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FQD30N06 Datasheet Preview — Preview of FQD30N06 PDF

Datasheet Specifications

Part number: FQD30N06
Manufacturer: onsemi
File Size: 318.74 KB
Datasheet: FQD30N06-onsemi.pdf
Description: N-Channel MOSFET

Features

* 22.7 A, 60 V RDS(on) = 45 mW (Max. ) @ VGS = 10 V, ID = 11.4 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 40 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise

FQD30N06 Distributors

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FQD30N06 N-Channel MOSFET onsemi

onsemi FQD30N06-like datasheet