FQD30N06 Datasheet - onsemi

FQD30N06 N-Channel MOSFET

This N *Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQD30N06 Features

* 22.7 A, 60 V RDS(on) = 45 mW (Max.) @ VGS = 10 V, ID = 11.4 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 40 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise

FQD30N06-onsemi.pdf