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FQD30N06 - N-Channel MOSFET

Datasheet Summary

Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Features

  • 22.7 A, 60 V RDS(on) = 45 mW (Max. ) @ VGS = 10 V, ID = 11.4 A.
  • Low Gate Charge (Typ. 19 nC).
  • Low Crss (Typ. 40 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant MOSFET.

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Datasheet preview – FQD30N06

Datasheet Details

Part number FQD30N06
Manufacturer onsemi
File Size 318.74 KB
Description N-Channel MOSFET
Datasheet download datasheet FQD30N06 Datasheet
Additional preview pages of the FQD30N06 datasheet.

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    Full PDF Text Transcription

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    MOSFET – N-Channel QFET 1000 V, 8 A, 1.45 W FQD30N06 Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 22.7 A, 60 V RDS(on) = 45 mW (Max.) @ VGS = 10 V, ID = 11.4 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 40 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.
    Published: |