FQD30N06 - N-Channel MOSFET

onsemi

FQD30N06 Datasheet Preview — Preview of FQD30N06 PDF

Datasheet Details

Part number	FQD30N06
Manufacturer	onsemi
File Size	318.74 KB
Description	N-Channel MOSFET
Datasheet	FQD30N06-onsemi.pdf

FQD30N06 Product details

Description

This N Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

22.7 A, 60 V RDS(on) = 45 mW (Max. ) @ VGS = 10 V, ID = 11.4 A.
Low Gate Charge (Typ. 19 nC).
Low Crss (Typ. 40 pF).
100% Avalanche Tested.
This Device is Pb.
Free Halide, Free and RoHS Compliant MOSFET.

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Published: Apr 14, 2025 |